Author: Kim, J.S.
Paper Title Page
PO17 Simulation of Electron and Ion Dynamics in an EBIS 97
  • L. Zhao, E.G. Evstati, J.S. Kim
    Far-Tech, Inc., San Diego, California, USA
  • E.N. Beebe, A.I. Pikin
    BNL, Upton, Long Island, New York, USA
  Funding: Grant supported by DOE office of Nuclear Physics
To model the dynamics of the ions in an Electron Beam Ion Source (EBIS), a time-dependent, self-consist particle-in-cell Monte Carlo code (EBIS-PIC) has been developed by FAR-TECH, Inc. The energetic background electron beam is modeled by PBGUNS ( by dividing the long beam path into several segments to resolve the big length-to-radius spatial scaling problem. The injected primary ions and ionized neutral gas ions are tracked using Monte Carlo method which includes the ionization, charge-exchange and Coulomb collisions with the electron beam and the neutral gas in the potential well, which is calculated by solving the Poisson equation each time step. EBIS-PIC has been able to predict the spatial and velocity space distributions and the evolution of the charge state distribution (CSD) of trapped ions in EBIS devices operating in fast or slow trapping mode. The physical model of EBIS-PIC code and the simulations of the trapping and charge-breeding of injected Cs+1 ions on the Test EBIS* at BNL will be presented. The simulation results have shown good consistency with the experiments.
* S. Kondrashev, J.G. Alessi, E.N.Beebe, C. Dickerson, P.N.Ostroumov, A. Pikin, G. Savard, NIMPR. A, 642 (2011), 18-24.